BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.
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Stress above one or more of the limiting values may cause permanent damage to the device.
BUT11AF 데이터시트(PDF) – Motorola, Inc
Publication thereof does not convey nor imply any license under patent or other industrial or dataseet property rights. Test circuit for VCEOsust. Exposure to limiting values for extended periods may affect device reliability. Region of permissible DC operation.
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August 8 Datasheeh 1. Extension for repetitive pulse operation. Typical DC current gain. August 4 Ptot max and Ptot peak max lines. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Product specification This data sheet contains final product specifications.
Transistor BUT11AF, NPN, TO-220F
No liability will be accepted by the publisher for any consequence of its use. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed but11ad notice. Test circuit resistive load. Refer to mounting instructions for F-pack envelopes. Normalised power derating and second breakdown curves. Switching times waveforms with inductive load.
SOT; The seating plane is electrically isolated from all terminals.
Oscilloscope display for VCEOsust. Reverse bias safe operating area. Typical base-emitter and collector-emitter saturation voltages. Forward bias safe operating area.
August 2 Rev 1. UNIT – – 1. Switching times waveforms with resistive load. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Test circuit inductive load. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
August 7 Rev 1. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Typical base-emitter saturation voltage. Application information Where application information is given, it is advisory and does not form part of the specification.